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IN-HOUSE DEVELOPED & COMMERCIALISED EQUIPMENT


Automated Integrated Test System (AITS) For Combined Microscopic And Macroscopic Analysis Of Hot-carrier Stressed Devices.

Cathodoluminescence (CL) System.

Characterization Of Interconnect Electromigration Defects Using Scanning Thermal Microscopy (SThM).
Field-Emission Induced Nanowires Growth and Characterisation Systems.

High Resolution Field-Emission Gun (FEG) Portable Mini SEM.

Scanning Electron Acoustic Microscopy (SEAM) for Subsurface Microelectronic Inspection & Failure Analysis.
 
 
Cathodoluminescence (CL) System
 

 
Main Features:
  • High efficiency collection and transmission optics.
  • Capable of panchromatic/monochromatic CL imaging and spectral analysis.
  • Spectral analysis from Ultra Violet to Near Infrared region.
Current Focus:
  • NIR imaging & spectral analysis
  • Time-resolved & depth-resolution CL

 

CL System Setup
 



 
The Retractable CL Detector
 



 

Defects Mapping
 

In0.54Ga0.46As /InP,
0.08% mismatch.

 
In0.46Ga0.54As /InP,
0.15% mismatch.

 
Depth-Resolved CL
 


At 22 KeV, only few defects appear in the emission region of the LED.


 


At 30 KeV, more defects are clearly seen as the electron beam penetrates deeper.

 
Temperature Dependant CL Spectroscopy
 


Characterization of Ge nanocrystals in SiOx matrix - Luminescence property as synthesized by different Rapid Thermal Annealing.

 


Characteriztoin of defects in SiO2 film-on-Si substrate - Temperature dependence of CL spectra.

 


 
  



 
 
   
 

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Last modified on 5 June, 2005