Centre for IC Failure Analysis and Reliability, CICFAR

Faculty of Engineering | Dept. of Electrical & Computer Engineering

IN-HOUSE DEVELOPED & COMMERCIALISED EQUIPMENT

Automated Integrated Test System (AITS) For Combined Microscopic And Macroscopic Analysis Of Hot-carrier Stressed Devices.

Cathodoluminescence (CL) System.

Characterization Of Interconnect Electromigration Defects Using Scanning Thermal Microscopy (SThM).

Field-Emission Induced Nanowires Growth and Characterisation Systems.

High Resolution Field-Emission Gun (FEG) Portable Mini SEM.

Scanning Electron Acoustic Microscopy (SEAM) for Subsurface Microelectronic Inspection & Failure Analysis.

Field-Emission Induced Nanowires Growth and Characterisation Systems

Main Features:

Field-emission induced growth of nanowires allows the growth of a single nanowire at a defined point.
Nanowires with diameters as small as a few nanometers with lengths of tens of microns can be grown.
Connection of electrodes by nanowires can be achieved.

Tungsten (W) Nanowire Growth System

Field-Emission Characterisation System

Environmental Scanning Probe Microscope for Nanostructure Imaging and Fabrication

Applications and Results
I-V measurement of single nanowire (W/Co) grown on electrodes.
Connection of Nanotubes (CNT etc. ) to electrodes by nanowire.
Tungsten (W) nanowire grown on a standard AFM tip.
AFM images of Ge nanoparticles
Standard AFM Tip.	AFM Tip with W Nanowire.

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