Scanning Electron Acoustic Microscopy (SEAM) for Subsurface Microelectronic Inspection & Failure Analysis
Application examples:
1. Imaging of Subsurface Cracks in Cu/low-k Devices
The SEAM image (Fig. 1(a)) clues-in on the presence of a subsurface feature as shown by the high contrast zone in the upper right of the field of view. A cross-sectional trench was subsequently milled using a Focused Ion Beam (FIB), and the resultant trench was imaged using an SEM (Fig. 1(b)), revealing the presence of a subsurface crack propagating deep (beyond 5 um) into the sample bulk.
This example demonstrates the capability of SEAM in profiling ferroelectric domains. The Secondary Electron (SE) image (Fig. 2(a)) shows the homogeneous surface topography of the BaTiO3 sample, while the SEAM image (Fig. 2(b)) reveals the ferroelectric domain configuration within the bulk of the sample.
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The SEAM image (Fig. 1(a)) clues-in on the presence of a subsurface feature as shown by the high contrast zone in the upper right of the field of view. A cross-sectional trench was subsequently milled using a Focused Ion Beam (FIB), and the resultant trench was imaged using an SEM (Fig. 1(b)), revealing the presence of a subsurface crack propagating deep (beyond 5 um) into the sample bulk.
Fig. 1(a) SEAM Image
Fig. 1(b) SEM cross-section
image of FIB cut
This example demonstrates the capability of SEAM in profiling ferroelectric domains. The Secondary Electron (SE) image (Fig. 2(a)) shows the homogeneous surface topography of the BaTiO3 sample, while the SEAM image (Fig. 2(b)) reveals the ferroelectric domain configuration within the bulk of the sample.
Fig. 2(a) SE Image of Sample
Surface.
Fig. 2(b) SEAM Image showing
ferroelectric domains.
