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IN-HOUSE DEVELOPED & COMMERCIALISED EQUIPMENT
Characterization Of Interconnect Electromigration Defects Using Scanning Thermal Microscopy (SThM)
 


Main Features:
  • High resolution quantitative temperature and thermal conductivity measurements on sub-micron devices cab be obtained.
  • By using a resistive wollanston wire resistive probe,  temperature resolution of 5mK and spatial resolution of 30nm can be achieved.
  • The temperature distributions of the interconnect structures and electromigration defects are investigated.

     
    SThM System
     



     

    SThM Probe
     



     

    Results
     



     



     

 

  



 

 
   
 

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Last modified on 5 June, 2005