Characterization Of Interconnect Electromigration Defects Using Scanning Thermal Microscopy (SThM)
Main Features:
- High resolution quantitative temperature and thermal conductivity measurements on sub-micron devices cab be obtained.
- By using a resistive wollanston wire resistive probe, temperature resolution of 5mK and spatial resolution of 30nm can be achieved.
- Very low beam landing energy down to 10eV.
- The temperature distributions of the interconnect structures and electromigration defects are investigated.
SThM System:
SThM Probe:
Results:
